Silicon Detector Arrays with Absolute Quantum Efficiency over 50% in the Far Ultraviolet for Single Photon Counting Applications

摘要

We have used Molecular Beam Epitaxy (MBE)-based delta doping technology todemonstrate near 100% internal quantum efficiency (QE) on siliconelectron-multiplied Charge Coupled Devices (EMCCDs) for single photon countingdetection applications. Furthermore, we have used precision techniques fordepositing antireflection (AR) coatings by employing Atomic Layer Deposition(ALD) and demonstrated over 50% external QE in the far and near-ultraviolet inmegapixel arrays. We have demonstrated that other device parameters such asdark current are unchanged after these processes. In this paper, we report onthese results and briefly discuss the techniques and processes employed.